Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells
Abstract The article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in an InGaN/AlGaN/ GaN heterostructures with one filled quantum-confinement subband. The aim of the article is to create a mathematical model that can be used to estimate the kinetic paramete...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Springer
2021-07-01
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| Series: | SN Applied Sciences |
| Subjects: | |
| Online Access: | https://doi.org/10.1007/s42452-021-04741-y |
| _version_ | 1818918027560747008 |
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| author | Evgeny R. Burmistrov Lev P. Avakyants Marina M. Afanasova |
| author_facet | Evgeny R. Burmistrov Lev P. Avakyants Marina M. Afanasova |
| author_sort | Evgeny R. Burmistrov |
| collection | DOAJ |
| description | Abstract The article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in an InGaN/AlGaN/ GaN heterostructures with one filled quantum-confinement subband. The aim of the article is to create a mathematical model that can be used to estimate the kinetic parameters of a two-dimensional electron gas (2DEG) in the structure under study. The results of the calculation of the matrix scattering potentials demonstrated the reliability and consistency on the used model of industrial LED heterostructures with InGaN/GaN quantum wells. It is shown that mechanical stresses in the InGaN/GaN layers lead to an uneven distribution of the total electric field along the active layer. It has been established that the lifetime limiting the mobility of a two-dimensional electron gas in piezoelectric scattering is of the order of 10–9 s. |
| first_indexed | 2024-12-20T00:43:26Z |
| format | Article |
| id | doaj.art-5abb1c1ee7b9490db7dcf8a6f8d6d6f3 |
| institution | Directory Open Access Journal |
| issn | 2523-3963 2523-3971 |
| language | English |
| last_indexed | 2024-12-20T00:43:26Z |
| publishDate | 2021-07-01 |
| publisher | Springer |
| record_format | Article |
| series | SN Applied Sciences |
| spelling | doaj.art-5abb1c1ee7b9490db7dcf8a6f8d6d6f32022-12-21T19:59:29ZengSpringerSN Applied Sciences2523-39632523-39712021-07-013811110.1007/s42452-021-04741-yPiezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wellsEvgeny R. Burmistrov0Lev P. Avakyants1Marina M. Afanasova2Faculty of Physics, M.V. Lomonosov Moscow State UniversityFaculty of Physics, M.V. Lomonosov Moscow State UniversityFaculty of Physics, M.V. Lomonosov Moscow State UniversityAbstract The article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in an InGaN/AlGaN/ GaN heterostructures with one filled quantum-confinement subband. The aim of the article is to create a mathematical model that can be used to estimate the kinetic parameters of a two-dimensional electron gas (2DEG) in the structure under study. The results of the calculation of the matrix scattering potentials demonstrated the reliability and consistency on the used model of industrial LED heterostructures with InGaN/GaN quantum wells. It is shown that mechanical stresses in the InGaN/GaN layers lead to an uneven distribution of the total electric field along the active layer. It has been established that the lifetime limiting the mobility of a two-dimensional electron gas in piezoelectric scattering is of the order of 10–9 s.https://doi.org/10.1007/s42452-021-04741-yQuantum wellMechanical stressesHeterostructureTransport timeTwo-dimensional electron gasScattering |
| spellingShingle | Evgeny R. Burmistrov Lev P. Avakyants Marina M. Afanasova Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells SN Applied Sciences Quantum well Mechanical stresses Heterostructure Transport time Two-dimensional electron gas Scattering |
| title | Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells |
| title_full | Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells |
| title_fullStr | Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells |
| title_full_unstemmed | Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells |
| title_short | Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells |
| title_sort | piezoelectric relaxation of two dimentional electron gas in ingan gan heterostructures with quantum wells |
| topic | Quantum well Mechanical stresses Heterostructure Transport time Two-dimensional electron gas Scattering |
| url | https://doi.org/10.1007/s42452-021-04741-y |
| work_keys_str_mv | AT evgenyrburmistrov piezoelectricrelaxationoftwodimentionalelectrongasininganganheterostructureswithquantumwells AT levpavakyants piezoelectricrelaxationoftwodimentionalelectrongasininganganheterostructureswithquantumwells AT marinamafanasova piezoelectricrelaxationoftwodimentionalelectrongasininganganheterostructureswithquantumwells |