Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-...

Full description

Bibliographic Details
Main Authors: Takayuki Kiba, Toru Tanaka, Yosuke Tamura, Akio Higo, Cedric Thomas, Seiji Samukawa, Akihiro Murayama
Format: Article
Language:English
Published: AIP Publishing LLC 2014-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4897958

Internet

http://dx.doi.org/10.1063/1.4897958

Similar Items