Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system
We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4897958 |
| _version_ | 1818859234506309632 |
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| author | Takayuki Kiba Toru Tanaka Yosuke Tamura Akio Higo Cedric Thomas Seiji Samukawa Akihiro Murayama |
| author_facet | Takayuki Kiba Toru Tanaka Yosuke Tamura Akio Higo Cedric Thomas Seiji Samukawa Akihiro Murayama |
| author_sort | Takayuki Kiba |
| collection | DOAJ |
| description | We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement. |
| first_indexed | 2024-12-19T09:08:57Z |
| format | Article |
| id | doaj.art-5abd80e08e2b48e0a086f595a327edd2 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-19T09:08:57Z |
| publishDate | 2014-10-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-5abd80e08e2b48e0a086f595a327edd22022-12-21T20:28:15ZengAIP Publishing LLCAIP Advances2158-32262014-10-01410107112107112-710.1063/1.4897958012410ADVImpact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic systemTakayuki Kiba0Toru Tanaka1Yosuke Tamura2Akio Higo3Cedric Thomas4Seiji Samukawa5Akihiro Murayama6Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo, JapanGraduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo, JapanInstitute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, JapanWPI-AIMR, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, JapanInstitute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, JapanInstitute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, JapanGraduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo, JapanWe demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement.http://dx.doi.org/10.1063/1.4897958 |
| spellingShingle | Takayuki Kiba Toru Tanaka Yosuke Tamura Akio Higo Cedric Thomas Seiji Samukawa Akihiro Murayama Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system AIP Advances |
| title | Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system |
| title_full | Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system |
| title_fullStr | Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system |
| title_full_unstemmed | Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system |
| title_short | Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system |
| title_sort | impact of artificial lateral quantum confinement on exciton spin relaxation in a two dimensional gaas electronic system |
| url | http://dx.doi.org/10.1063/1.4897958 |
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