Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system
We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4897958 |