A Self‐Terminated Operation Scheme for High‐Parallel and Energy‐Efficient Forming of RRAM Array

A Self‐Terminated Operation Scheme for High‐Parallel and Energy‐Efficient Forming of RRAM Array

Abstract By introducing a capacitor in series (CST), a self‐terminated (ST) operation scheme is proposed to achieve high‐parallel forming of resistive random access memory (RRAM) array with reduced time and energy consumption. Once the RRAM cell is switched to the low‐resistance state, the current i...

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Bibliographic Details
Main Authors: Yulin Feng, Peng Huang, Yizhou Zhang, Wensheng Shen, Weijie Xu, Yachen Xiang, Xiangxiang Ding, Yudi Zhao, Bin Gao, Huaqiang Wu, He Qian, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang
Format: Article
Language:English
Published: Wiley-VCH 2020-04-01
Series:Advanced Electronic Materials
Subjects:
forming
resistive random access memory
self‐terminated operation
wire capacitance
Online Access:https://doi.org/10.1002/aelm.201901324

Internet

https://doi.org/10.1002/aelm.201901324

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