A Self‐Terminated Operation Scheme for High‐Parallel and Energy‐Efficient Forming of RRAM Array
Abstract By introducing a capacitor in series (CST), a self‐terminated (ST) operation scheme is proposed to achieve high‐parallel forming of resistive random access memory (RRAM) array with reduced time and energy consumption. Once the RRAM cell is switched to the low‐resistance state, the current i...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2020-04-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.201901324 |
| _version_ | 1797656116802355200 |
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| author | Yulin Feng Peng Huang Yizhou Zhang Wensheng Shen Weijie Xu Yachen Xiang Xiangxiang Ding Yudi Zhao Bin Gao Huaqiang Wu He Qian Lifeng Liu Xiaoyan Liu Jinfeng Kang |
| author_facet | Yulin Feng Peng Huang Yizhou Zhang Wensheng Shen Weijie Xu Yachen Xiang Xiangxiang Ding Yudi Zhao Bin Gao Huaqiang Wu He Qian Lifeng Liu Xiaoyan Liu Jinfeng Kang |
| author_sort | Yulin Feng |
| collection | DOAJ |
| description | Abstract By introducing a capacitor in series (CST), a self‐terminated (ST) operation scheme is proposed to achieve high‐parallel forming of resistive random access memory (RRAM) array with reduced time and energy consumption. Once the RRAM cell is switched to the low‐resistance state, the current is automatically cut off by the capacitor, which can significantly improve the parallelism and energy efficiency. The wire capacitance of interconnect (Cwire) can be utilized as CST, which means there is no addition circuit or process expense for the proposed ST scheme. After successful experimental verification of the proposed ST operation scheme in 1 kb RRAM array, the performance of 1 Gb RRAM memory is evaluated, which shows × 103 improvement in forming time (from 0.6 h to 0.84 s) and × 104 improvement in energy consumption. Moreover, by experimentally leveraging the operation scheme for array forming, the operation current is reduced in subsequent switching process without deteriorating the device reliability, which demonstrates the feasibility of the proposed ST operation scheme and its potential in low power applications. |
| first_indexed | 2024-03-11T17:24:42Z |
| format | Article |
| id | doaj.art-5ac44678f26348a68d86df336285d41c |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-11T17:24:42Z |
| publishDate | 2020-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-5ac44678f26348a68d86df336285d41c2023-10-19T05:02:13ZengWiley-VCHAdvanced Electronic Materials2199-160X2020-04-0164n/an/a10.1002/aelm.201901324A Self‐Terminated Operation Scheme for High‐Parallel and Energy‐Efficient Forming of RRAM ArrayYulin Feng0Peng Huang1Yizhou Zhang2Wensheng Shen3Weijie Xu4Yachen Xiang5Xiangxiang Ding6Yudi Zhao7Bin Gao8Huaqiang Wu9He Qian10Lifeng Liu11Xiaoyan Liu12Jinfeng Kang13Institute of Microelectronics Peking University Beijing 100871 ChinaInstitute of Microelectronics Peking University Beijing 100871 ChinaInstitute of Microelectronics Peking University Beijing 100871 ChinaInstitute of Microelectronics Peking University Beijing 100871 ChinaInstitute of Microelectronics Peking University Beijing 100871 ChinaInstitute of Microelectronics Peking University Beijing 100871 ChinaInstitute of Microelectronics Peking University Beijing 100871 ChinaInstitute of Microelectronics Peking University Beijing 100871 ChinaInstitute of Microelectronics Tsinghua University Beijing 100084 ChinaInstitute of Microelectronics Tsinghua University Beijing 100084 ChinaInstitute of Microelectronics Tsinghua University Beijing 100084 ChinaInstitute of Microelectronics Peking University Beijing 100871 ChinaInstitute of Microelectronics Peking University Beijing 100871 ChinaInstitute of Microelectronics Peking University Beijing 100871 ChinaAbstract By introducing a capacitor in series (CST), a self‐terminated (ST) operation scheme is proposed to achieve high‐parallel forming of resistive random access memory (RRAM) array with reduced time and energy consumption. Once the RRAM cell is switched to the low‐resistance state, the current is automatically cut off by the capacitor, which can significantly improve the parallelism and energy efficiency. The wire capacitance of interconnect (Cwire) can be utilized as CST, which means there is no addition circuit or process expense for the proposed ST scheme. After successful experimental verification of the proposed ST operation scheme in 1 kb RRAM array, the performance of 1 Gb RRAM memory is evaluated, which shows × 103 improvement in forming time (from 0.6 h to 0.84 s) and × 104 improvement in energy consumption. Moreover, by experimentally leveraging the operation scheme for array forming, the operation current is reduced in subsequent switching process without deteriorating the device reliability, which demonstrates the feasibility of the proposed ST operation scheme and its potential in low power applications.https://doi.org/10.1002/aelm.201901324formingresistive random access memoryself‐terminated operationwire capacitance |
| spellingShingle | Yulin Feng Peng Huang Yizhou Zhang Wensheng Shen Weijie Xu Yachen Xiang Xiangxiang Ding Yudi Zhao Bin Gao Huaqiang Wu He Qian Lifeng Liu Xiaoyan Liu Jinfeng Kang A Self‐Terminated Operation Scheme for High‐Parallel and Energy‐Efficient Forming of RRAM Array Advanced Electronic Materials forming resistive random access memory self‐terminated operation wire capacitance |
| title | A Self‐Terminated Operation Scheme for High‐Parallel and Energy‐Efficient Forming of RRAM Array |
| title_full | A Self‐Terminated Operation Scheme for High‐Parallel and Energy‐Efficient Forming of RRAM Array |
| title_fullStr | A Self‐Terminated Operation Scheme for High‐Parallel and Energy‐Efficient Forming of RRAM Array |
| title_full_unstemmed | A Self‐Terminated Operation Scheme for High‐Parallel and Energy‐Efficient Forming of RRAM Array |
| title_short | A Self‐Terminated Operation Scheme for High‐Parallel and Energy‐Efficient Forming of RRAM Array |
| title_sort | self terminated operation scheme for high parallel and energy efficient forming of rram array |
| topic | forming resistive random access memory self‐terminated operation wire capacitance |
| url | https://doi.org/10.1002/aelm.201901324 |
| work_keys_str_mv | AT yulinfeng aselfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT penghuang aselfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT yizhouzhang aselfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT wenshengshen aselfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT weijiexu aselfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT yachenxiang aselfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT xiangxiangding aselfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT yudizhao aselfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT bingao aselfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT huaqiangwu aselfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT heqian aselfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT lifengliu aselfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT xiaoyanliu aselfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT jinfengkang aselfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT yulinfeng selfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT penghuang selfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT yizhouzhang selfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT wenshengshen selfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT weijiexu selfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT yachenxiang selfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT xiangxiangding selfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT yudizhao selfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT bingao selfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT huaqiangwu selfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT heqian selfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT lifengliu selfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT xiaoyanliu selfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray AT jinfengkang selfterminatedoperationschemeforhighparallelandenergyefficientformingofrramarray |