Resonant Tunneling of Electrons and Holes through the In<sub>x</sub>Ga<sub>1−x</sub>N/GaN Parabolic Quantum Well/LED Structure
Models describing the tunneling of electrons and holes through parabolic In<sub>x</sub>Ga<sub>1−x</sub>N/GaN quantum well/LED structures with respect to strain were developed. The transmission coefficient, tunneling lifetime, and efficiency of LED structures were evaluated by...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-08-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/8/1166 |