High Throughput Characterization of Epitaxially Grown Single-Layer MoS2

High Throughput Characterization of Epitaxially Grown Single-Layer MoS2

The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 crystallites grown on a highly-polished sap...

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Bibliographic Details
Main Authors: Foad Ghasemi, Riccardo Frisenda, Dumitru Dumcenco, Andras Kis, David Perez de Lara, Andres Castellanos-Gomez
Format: Article
Language:English
Published: MDPI AG 2017-03-01
Series:Electronics
Subjects:
two dimensional materials
chemical vapor deposition
MoS2
reflectance
exciton
Online Access:http://www.mdpi.com/2079-9292/6/2/28

Internet

http://www.mdpi.com/2079-9292/6/2/28

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