Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K
In this work, the high temperature performance of a diamond Schottky PIN diode is reported in the range of 298-873 K. The diamond diode exhibited an explicit rectification up to 723 K with an excellent forward current density of >3000 A/cm<sup>2</sup>. The stability of the diode w...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9106773/ |