Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K
In this work, the high temperature performance of a diamond Schottky PIN diode is reported in the range of 298-873 K. The diamond diode exhibited an explicit rectification up to 723 K with an excellent forward current density of >3000 A/cm<sup>2</sup>. The stability of the diode w...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9106773/ |
| _version_ | 1819171824914661376 |
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| author | M. Malakoutian M. Benipal F. A. Koeck R. J. Nemanich S. Chowdhury |
| author_facet | M. Malakoutian M. Benipal F. A. Koeck R. J. Nemanich S. Chowdhury |
| author_sort | M. Malakoutian |
| collection | DOAJ |
| description | In this work, the high temperature performance of a diamond Schottky PIN diode is reported in the range of 298-873 K. The diamond diode exhibited an explicit rectification up to 723 K with an excellent forward current density of >3000 A/cm<sup>2</sup>. The stability of the diode was investigated by exposing the sample to high temperature cycles (up to 873 K) for more than 10 times (totaling up to 120 hours), which exhibited no change between the I-V characteristics measured in each cycle. The dependence of ideality factor and Schottky barrier height on temperature along with an extracted Richardson's constant much smaller than the theoretical value (0.0461 A/cm<sup>2</sup>.K<sup>2</sup>), motivated us to study the possible reason for this anomaly. A modified thermionic emission model following Tung's analysis was used to explain the experimental observations. The model assumed the presence of inhomogeneous Schottky barrier heights leading to a reduced effective area and yielded a Richardson's constant closer to the theoretical value. Conductive atomic force microscopy studies were conducted, which concurred with the electrical data and confirmed the presence of inhomogeneous Schottky barrier heights. |
| first_indexed | 2024-12-22T19:57:26Z |
| format | Article |
| id | doaj.art-5af4d6ffa2a8467b8801b1d3f905bd34 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-22T19:57:26Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-5af4d6ffa2a8467b8801b1d3f905bd342022-12-21T18:14:24ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01861461810.1109/JEDS.2020.29992699106773Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 KM. Malakoutian0M. Benipal1F. A. Koeck2R. J. Nemanich3S. Chowdhury4Electrical and Computer Engineering Department, University of California at Davis, Davis, CA, USAAdvent Diamond Inc., Scottsdale, AZ, USADepartment of Physics, Arizona State University, Tempe, AZ, USADepartment of Physics, Arizona State University, Tempe, AZ, USADepartment of Electrical Engineering, Stanford University, Stanford, CA, USAIn this work, the high temperature performance of a diamond Schottky PIN diode is reported in the range of 298-873 K. The diamond diode exhibited an explicit rectification up to 723 K with an excellent forward current density of >3000 A/cm<sup>2</sup>. The stability of the diode was investigated by exposing the sample to high temperature cycles (up to 873 K) for more than 10 times (totaling up to 120 hours), which exhibited no change between the I-V characteristics measured in each cycle. The dependence of ideality factor and Schottky barrier height on temperature along with an extracted Richardson's constant much smaller than the theoretical value (0.0461 A/cm<sup>2</sup>.K<sup>2</sup>), motivated us to study the possible reason for this anomaly. A modified thermionic emission model following Tung's analysis was used to explain the experimental observations. The model assumed the presence of inhomogeneous Schottky barrier heights leading to a reduced effective area and yielded a Richardson's constant closer to the theoretical value. Conductive atomic force microscopy studies were conducted, which concurred with the electrical data and confirmed the presence of inhomogeneous Schottky barrier heights.https://ieeexplore.ieee.org/document/9106773/DiamondSchottky PIN diode (SPIND)high temperature operationbarrier height |
| spellingShingle | M. Malakoutian M. Benipal F. A. Koeck R. J. Nemanich S. Chowdhury Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K IEEE Journal of the Electron Devices Society Diamond Schottky PIN diode (SPIND) high temperature operation barrier height |
| title | Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K |
| title_full | Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K |
| title_fullStr | Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K |
| title_full_unstemmed | Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K |
| title_short | Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K |
| title_sort | schottky barrier height analysis of diamond spind using high temperature operation up to 873 k |
| topic | Diamond Schottky PIN diode (SPIND) high temperature operation barrier height |
| url | https://ieeexplore.ieee.org/document/9106773/ |
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