Design, Fabrication, and Characterization of a PTAT Sensor Using CMOS Technology
This paper presents the design of an integrated temperature sensor. The sensor was manufactured using the 3 µm CMOS technology. The proportional to absolute temperature sensor output signal was produced by two MOS transistors with biasing and buffering circuits. The sensor output voltage was linearl...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-01-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/13/2/429 |