Design of Peltier Element Based on Semiconductors with Hopping Electron Transfer via Defects
The study of thermoelectric properties of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant Peltier elements. In this case, the spectrum of energy levels of hydrogen-like impurities and intrinsic point defects in the band gap (energ...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Belarusian National Technical University
2021-03-01
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| Series: | Pribory i Metody Izmerenij |
| Subjects: | |
| Online Access: | https://pimi.bntu.by/jour/article/view/695 |