Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test
The dynamic on-resistance (R<sub>ON</sub>) behavior of one commercial GaN HEMT device with p-GaN gate is investigated under hard-switching conditions. The non-monotonic performance of dynamic R<sub>ON</sub> with off-state voltage ranging from 50 to 400 V is ascribed to the “l...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-05-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/10/1202 |