The improvement of Si0.5Ge0.5/Si interface quality by using low energy hydrogen plasma cleaning process and positron annihilation spectroscopy

The improvement of Si0.5Ge0.5/Si interface quality by using low energy hydrogen plasma cleaning process and positron annihilation spectroscopy

Positron Annihilation Spectra (PAS), Raman, and photoluminescence spectroscopy reveal that Si<sub>0.5</sub>Ge<sub>0.5</sub>/Si interface quality can be dramatically improved through a low energy plasma cleaning process using hydrogen. In the PAS, the particularly small values...

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Bibliographic Details
Main Authors: Cho-Fan Hsieh, Chen-Wei Chen, Chih-Hua Chen, Ming-Han Liao
Format: Article
Language:English
Published: Chinese Institute of Automation Engineers (CIAE) & Taiwan Smart Living Space Association (SMART LISA) 2014-02-01
Series:International Journal of Automation and Smart Technology
Subjects:
Defect, Low energy hydrogen plasma cleaning process, SiGe-based devices, Positron annihilation spectroscopy
Online Access:http://www.ausmt.org/index.php/AUSMT/article/view/234

Internet

http://www.ausmt.org/index.php/AUSMT/article/view/234

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