Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN<sub>x</sub>:H Resistive Switching Memory by the Transient Current

Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN<sub>x</sub>:H Resistive Switching Memory by the Transient Current

With the big data and artificial intelligence era coming, SiN<sub>x</sub>-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of biological synapses. Howev...

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Bibliographic Details
Main Authors: Tong Chen, Kangmin Leng, Zhongyuan Ma, Xiaofan Jiang, Kunji Chen, Wei Li, Jun Xu, Ling Xu
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Nanomaterials
Subjects:
resistive switching memory
transient current
trap state
Online Access:https://www.mdpi.com/2079-4991/13/1/85

Internet

https://www.mdpi.com/2079-4991/13/1/85

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