Enhancement-Mode Heterojunction Vertical β-Ga<sub>2</sub>O<sub>3</sub> MOSFET with a P-Type Oxide Current-Blocking Layer
The vertical heterojunction Ga<sub>2</sub>O<sub>3</sub> MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the p-type oxide as the current-blocking layer (CBL) is investigated for the first time using SILVACO simulation software. The results show that the thresho...
Main Authors: | , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-02-01
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Series: | Applied Sciences |
Subjects: | |
Online Access: | https://www.mdpi.com/2076-3417/12/3/1757 |