Enhancement-Mode Heterojunction Vertical β-Ga<sub>2</sub>O<sub>3</sub> MOSFET with a P-Type Oxide Current-Blocking Layer

The vertical heterojunction Ga<sub>2</sub>O<sub>3</sub> MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the p-type oxide as the current-blocking layer (CBL) is investigated for the first time using SILVACO simulation software. The results show that the thresho...

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Bibliographic Details
Main Authors: Yuwen Huang, Xiaoping Xie, Zeyulin Zhang, Peng Dong, Zhe Li, Dazheng Chen, Weidong Zhu, Shenglei Zhao, Qian Feng, Jincheng Zhang, Chunfu Zhang, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2022-02-01
Series:Applied Sciences
Subjects:
Online Access:https://www.mdpi.com/2076-3417/12/3/1757