Reliability Study of Metal-Oxide Semiconductors in Integrated Circuits

Reliability Study of Metal-Oxide Semiconductors in Integrated Circuits

This paper is devoted to the study of CMOS IC parameter degradation during reliability testing. The paper presents a review of literature data on the issue of the reliability of semiconductor devices and integrated circuits and the types of failures leading to the degradation of IC parameters. It de...

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Main Authors: Boris V. Malozyomov, Nikita V. Martyushev, Natalia Nikolaevna Bryukhanova, Viktor V. Kondratiev, Roman V. Kononenko, Pavel P. Pavlov, Victoria V. Romanova, Yuliya I. Karlina
格式: 文件
语言:English
出版: MDPI AG 2024-04-01
丛编:Micromachines
主题:
metal-oxide semiconductors
microcircuit
reliability
rejection tests
temperature regime
activation energy
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