Resistive Switching Property of Organic–Inorganic Tri-Cation Lead Iodide Perovskite Memory Device

Resistive Switching Property of Organic–Inorganic Tri-Cation Lead Iodide Perovskite Memory Device

In this study, a glass/indium tin oxide (ITO)/formamidinium-methylammonium-cesium (FA-MA-Cs) tri-cation lead iodide perovskite/poly(methyl methacrylate (PMMA)/Al memory device with a controlled composition of (FA<sub>0.75</sub>MA<sub>0.25</sub>)<sub>1-x</sub>Cs<...

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Bibliographic Details
Main Authors: Yuan-Wen Hsiao, Shi-Yu Wang, Cheng-Liang Huang, Ching-Chich Leu, Chuan-Feng Shih
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Nanomaterials
Subjects:
tri-cation organic–inorganic perovskite
(FA<sub>0.75</sub>MA<sub>0.25</sub>)<sub>1-x</sub>Cs<sub>x</sub>PbI<sub>3</sub>
CsI doping
resistive random access memory
Online Access:https://www.mdpi.com/2079-4991/10/6/1155

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https://www.mdpi.com/2079-4991/10/6/1155

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