Controlled SOI nanopatterning for GaN pendeo-epitaxy

Controlled SOI nanopatterning for GaN pendeo-epitaxy

Nanopatterning of GaN/AlN layers on Silicon-On-Insulator (SOI) substrates is discussed with the aim of fabricating nanopillar arrays that can be used for subsequent GaN pendeo-epitaxy. The principle of the developed epitaxy process is that GaN crystallites are grown on deformable nano-pedestals able...

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Bibliographic Details
Main Authors: Mrad Mrad, Kilian Baril, Matthew Charles, Jesus Zuniga Perez, Sébastien Labau, Marie Panabiere, Camille Petit-Etienne, Blandine Alloing, Gauthier Lefevre, Ludovic Dupré, Guy Feuillet, Cécile Gourgon
Format: Article
Language:English
Published: Elsevier 2022-04-01
Series:Micro and Nano Engineering
Subjects:
GaN/SOI nanopatterning
Nanoimprint lithography
Inductively coupled plasma
Highresolution 100 nm nanopillars
GaN pendeoepitaxy
Future microLEDs
Online Access:http://www.sciencedirect.com/science/article/pii/S2590007222000077

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http://www.sciencedirect.com/science/article/pii/S2590007222000077

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