Formation of quaternary Zn(AlxGa1−x)2O4 epilayers driven by thermally induced interdiffusion between spinel ZnGa2O4 epilayer and Al2O3 substrate

Formation of quaternary Zn(AlxGa1−x)2O4 epilayers driven by thermally induced interdiffusion between spinel ZnGa2O4 epilayer and Al2O3 substrate

Zinc aluminogallate, Zn(AlxGa1−x)2O4 (ZAGO), a single-phase spinel structure, offers considerable potential for high-performance electronic devices due to its expansive compositional miscibility range between aluminum (Al) and gallium (Ga). Direct growth of high-quality ZAGO epilayers however remain...

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Bibliographic Details
Main Authors: Samiran Bairagi, Jui-Che Chang, Fu-Gow Tarntair, Wan-Yu Wu, Gueorgui K. Gueorguiev, Edward Ferraz de Almeida, Jr., Roger Magnusson, Kun-Lin Lin, Shao-Hui Hsu, Jia-Min Shieh, Jens Birch, Ray-Hua Horng, Kenneth Järrendahl, Ching-Lien Hsiao
Format: Article
Language:English
Published: Elsevier 2023-12-01
Series:Materials Today Advances
Subjects:
Zinc aluminogallate
Ellipsometry
Semiconductors
Annealing
Interdiffusion
Bandgap
Online Access:http://www.sciencedirect.com/science/article/pii/S2590049823000826

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http://www.sciencedirect.com/science/article/pii/S2590049823000826

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