Unipolar resistive switching in planar Pt/BiFeO3/Pt structure

We report unipolar resistive switching suitable for nonvolatile memory applications in polycrystalline BiFeO3 thin films in planar electrode configuration with non-overlapping Set and Reset voltages, On/Off resistance ratio of ∼104 and good data retention (verified for up to 3,000 s). We have also o...

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Bibliographic Details
Main Authors: Rajesh K. Katiyar, Yogesh Sharma, Danilo G. Barrionuevo Diestra, Pankaj Misra, Sudheendran Kooriyattil, Shojan P. Pavunny, Gerardo Morell, Brad R. Weiner, J. F. Scott, Ram S. Katiyar
Format: Article
Language:English
Published: AIP Publishing LLC 2015-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4914475