Unipolar resistive switching in planar Pt/BiFeO3/Pt structure
We report unipolar resistive switching suitable for nonvolatile memory applications in polycrystalline BiFeO3 thin films in planar electrode configuration with non-overlapping Set and Reset voltages, On/Off resistance ratio of ∼104 and good data retention (verified for up to 3,000 s). We have also o...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2015-03-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4914475 |