Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure

Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure

In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on a polycrystalline silicon nanotube structure with a grain boundary (GB) is designed and analyzed using technology computer-aided design (TCAD) simulation. The proposed 1T-DRAM has the improved electrical pe...

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Bibliographic Details
Main Authors: Jin Park, Min Su Cho, Sang Ho Lee, Hee Dae An, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Sin-Hyung Lee, Jaewon Jang, Jin-Hyuk Bae, In Man Kang
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Polycrystalline silicon
one-transistor dynamic random-access memory
grain boundary
nanotube
metal–oxide–semiconductor field-effect transistor
dual-gate
Online Access:https://ieeexplore.ieee.org/document/9641815/

Internet

https://ieeexplore.ieee.org/document/9641815/

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