Epitaxial Growth of Bi2Se3 Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy
Epitaxial n-type infrared transparent conductive Bi2Se3 thin film was cultivated by molecular beam epitaxy (MBE) method on Al2O3 (001) substrate. The orientation between Bi2Se3 and the substrate is Bi2Se3(001)//Al2O3(1 2¯ 10). Conducting mechanism ensued the small-polaron hopping mechanism, with an...
| Main Authors: | , , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado: |
Frontiers Media S.A.
2022-01-01
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| Series: | Frontiers in Chemistry |
| Subjects: | |
| Acceso en liña: | https://www.frontiersin.org/articles/10.3389/fchem.2022.847972/full |