Modeling Fermi energy, free-carrier density, and resistivity in degenerate n-Ge
A new expression for Fermi energy vs doping is derived using the standard model for free carriers in n-type semiconductors. The new expression is composed of the Fermi energy in non-degenerate semiconductors, a doping function for bandgap narrowing (BGN), and an adjustable energy variation. In non-d...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2024-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0163730 |