Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

Abstract The HfO2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as a possible candidate for high-density and fast write speed non-volatile memory. Although the retention performance of the HfO2-b...

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Bibliographic Details
Main Authors: Wenwu Xiao, Chen Liu, Yue Peng, Shuaizhi Zheng, Qian Feng, Chunfu Zhang, Jincheng Zhang, Yue Hao, Min Liao, Yichun Zhou
Format: Article
Language:English
Published: SpringerOpen 2019-07-01
Series:Nanoscale Research Letters
Subjects:
HfO2-based FeFET
Memory window
Retention
Endurance
ZrO2 seed layer
Online Access:http://link.springer.com/article/10.1186/s11671-019-3063-2

Internet

http://link.springer.com/article/10.1186/s11671-019-3063-2

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