Comments on the electronic transport mechanisms in the crystalline state of Ge—Sb—Te phase-change materials
It is known that phase-change materials, such as Ge–Sb—Te ternary system, are promising resistive non-volatile random-access memory applications with ultra-rapid reversible transformations between the crystalline and amorphous phases. This class of electronic transition is categorized to be the meta...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Herzen State Pedagogical University of Russia
2021-06-01
|
| Series: | Physics of Complex Systems |
| Subjects: | |
| Online Access: | https://physcomsys.ru/index.php/physcomsys/article/view/51 |