Novel model of material removal rate on ultrasonic-assisted chemical mechanical polishing for sapphire

Abstract Ultrasonic-assisted chemical mechanical polishing (UA-CMP) can greatly improve the sapphire material removal and surface quality, but its polishing mechanism is still unclear. This paper proposed a novel model of material removal rate (MRR) to explore the mechanism of sapphire UA-CMP. It co...

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Bibliographic Details
Main Authors: Mufang Zhou, Min Zhong, Wenhu Xu
Format: Article
Language:English
Published: SpringerOpen 2023-02-01
Series:Friction
Subjects:
Online Access:https://doi.org/10.1007/s40544-022-0713-7