Effects of excitation frequency on high-order terahertz sideband generation in semiconductors

We theoretically investigate the effects of the excitation frequency on the plateau of high-order terahertz sideband generation (HSG) in semiconductors driven by intense terahertz (THz) fields. We find that the plateau of the sideband spectrum strongly depends on the detuning between the near-infrar...

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Bibliographic Details
Main Authors: Xiao-Tao Xie, Bang-Fen Zhu, Ren-Bao Liu
Format: Article
Language:English
Published: IOP Publishing 2013-01-01
Series:New Journal of Physics
Online Access:https://doi.org/10.1088/1367-2630/15/10/105015