Reliability Study of 1T1C FeRAM Arrays With Hf<sub>0.5</sub>Zr<sub>0.5</sub>O&#x2082; Thickness Scaling

Reliability Study of 1T1C FeRAM Arrays With Hf<sub>0.5</sub>Zr<sub>0.5</sub>O&#x2082; Thickness Scaling

We have reported that film thickness scaling of ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>(HZO) allows hafnium-based one- transistor and one-capacitor (1T1C) ferroelectric random-access memory (FeRAM) to obtain higher cycling tolerance for hard br...

Full description

Bibliographic Details
Main Authors: Jun Okuno, Takafumi Kunihiro, Kenta Konishi, Yusuke Shuto, Fumitaka Sugaya, Monica Materano, Tarek Ali, Maximilian Lederer, Kati Kuehnel, Konrad Seidel, Thomas Mikolajick, Uwe Schroeder, Masanori Tsukamoto, Taku Umebayashi
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Capacitor
ferroelectric random-access memory
hafnium oxide
thickness scaling
zirconium oxide
Online Access:https://ieeexplore.ieee.org/document/9810188/

Internet

https://ieeexplore.ieee.org/document/9810188/

Similar Items