Investigation of ion induced bending mechanism for nanostructures
Ion induced bending is a promising controlled technique for manipulating nanoscale structures. However, the underlying mechanism of the process is not well understood. In this letter, we report a detailed study of the bending mechanism of Si nanowires (NWs) under Ga ^+ irradiation. The microstructur...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2014-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/2/1/015002 |