Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble
We present the combined analysis of electroluminescence (EL) and current–voltage (I–V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron mi...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Beilstein-Institut
2019-06-01
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Series: | Beilstein Journal of Nanotechnology |
Subjects: | |
Online Access: | https://doi.org/10.3762/bjnano.10.117 |