Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble
We present the combined analysis of electroluminescence (EL) and current–voltage (I–V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron mi...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Beilstein-Institut
2019-06-01
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| Series: | Beilstein Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://doi.org/10.3762/bjnano.10.117 |
| _version_ | 1818481090400092160 |
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| author | David van Treeck Johannes Ledig Gregor Scholz Jonas Lähnemann Mattia Musolino Abbes Tahraoui Oliver Brandt Andreas Waag Henning Riechert Lutz Geelhaar |
| author_facet | David van Treeck Johannes Ledig Gregor Scholz Jonas Lähnemann Mattia Musolino Abbes Tahraoui Oliver Brandt Andreas Waag Henning Riechert Lutz Geelhaar |
| author_sort | David van Treeck |
| collection | DOAJ |
| description | We present the combined analysis of electroluminescence (EL) and current–voltage (I–V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single NW spectra consist of emission lines originating from different quantum wells, and the width of the spectra increases with decreasing peak emission energy. The corresponding I–V characteristics are described well by a modified Shockley equation. The key advantage of this measurement approach is the possibility to correlate the EL intensity of a single-NW LED with the actual current density in this NW. This way, the external quantum efficiency (EQE) can be investigated as a function of the current in a single-NW LED. The comparison of the EQE characteristic of single NWs and the ensemble device allows for a quite accurate determination of the actual number of emitting NWs in the working ensemble LED and the respective current densities in its individual NWs. This information is decisive for a meaningful and comprehensive characterization of a NW ensemble device, rendering the measurement approach employed here a very powerful analysis tool. |
| first_indexed | 2024-12-10T11:30:47Z |
| format | Article |
| id | doaj.art-5e51607d977f498c87dd182754affc30 |
| institution | Directory Open Access Journal |
| issn | 2190-4286 |
| language | English |
| last_indexed | 2024-12-10T11:30:47Z |
| publishDate | 2019-06-01 |
| publisher | Beilstein-Institut |
| record_format | Article |
| series | Beilstein Journal of Nanotechnology |
| spelling | doaj.art-5e51607d977f498c87dd182754affc302022-12-22T01:50:35ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862019-06-011011177118710.3762/bjnano.10.1172190-4286-10-117Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensembleDavid van Treeck0Johannes Ledig1Gregor Scholz2Jonas Lähnemann3Mattia Musolino4Abbes Tahraoui5Oliver Brandt6Andreas Waag7Henning Riechert8Lutz Geelhaar9Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5–7, 10117 Berlin, GermanyInstitut für Halbleitertechnik, TU Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig, GermanyInstitut für Halbleitertechnik, TU Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig, GermanyPaul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5–7, 10117 Berlin, GermanyPaul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5–7, 10117 Berlin, GermanyPaul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5–7, 10117 Berlin, GermanyPaul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5–7, 10117 Berlin, GermanyInstitut für Halbleitertechnik, TU Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig, GermanyPaul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5–7, 10117 Berlin, GermanyPaul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5–7, 10117 Berlin, GermanyWe present the combined analysis of electroluminescence (EL) and current–voltage (I–V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecular beam epitaxy. The data were acquired in a scanning electron microscope equipped with a micromanipulator and a luminescence detection system. Single NW spectra consist of emission lines originating from different quantum wells, and the width of the spectra increases with decreasing peak emission energy. The corresponding I–V characteristics are described well by a modified Shockley equation. The key advantage of this measurement approach is the possibility to correlate the EL intensity of a single-NW LED with the actual current density in this NW. This way, the external quantum efficiency (EQE) can be investigated as a function of the current in a single-NW LED. The comparison of the EQE characteristic of single NWs and the ensemble device allows for a quite accurate determination of the actual number of emitting NWs in the working ensemble LED and the respective current densities in its individual NWs. This information is decisive for a meaningful and comprehensive characterization of a NW ensemble device, rendering the measurement approach employed here a very powerful analysis tool.https://doi.org/10.3762/bjnano.10.117electroluminescenceexternal quantum efficiency (EQE)nanowire LEDsingle nanowirecurrent–voltage |
| spellingShingle | David van Treeck Johannes Ledig Gregor Scholz Jonas Lähnemann Mattia Musolino Abbes Tahraoui Oliver Brandt Andreas Waag Henning Riechert Lutz Geelhaar Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble Beilstein Journal of Nanotechnology electroluminescence external quantum efficiency (EQE) nanowire LED single nanowire current–voltage |
| title | Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble |
| title_full | Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble |
| title_fullStr | Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble |
| title_full_unstemmed | Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble |
| title_short | Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble |
| title_sort | electroluminescence and current voltage measurements of single in ga n gan nanowire light emitting diodes in a nanowire ensemble |
| topic | electroluminescence external quantum efficiency (EQE) nanowire LED single nanowire current–voltage |
| url | https://doi.org/10.3762/bjnano.10.117 |
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