Facile process to clean PMMA residue on graphene using KrF laser annealing
Persistent PMMA residue formed during a graphene transfer has been a culprit in the optimization of graphene device performance. We demonstrated a facile process to remove the PMMA residue using pulsed KrF laser annealing system at H2/Ar ambient. 10min laser annealing at 248nm could remove the PMMA...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5051671 |