Polarization Modulation on Charge Transfer and Band Structures of GaN/MoS<sub>2</sub> Polar Heterojunctions

Polarization Modulation on Charge Transfer and Band Structures of GaN/MoS<sub>2</sub> Polar Heterojunctions

As important third-generation semiconductors, wurtzite III nitrides have strong spontaneous and piezoelectric polarization effects. They can be used to construct multifunctional polar heterojunctions or quantum structures with other emerging two-dimensional (2D) semiconductors. Here, we investigate...

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Bibliographic Details
Main Authors: Feng Tian, Delin Kong, Peng Qiu, Heng Liu, Xiaoli Zhu, Huiyun Wei, Yimeng Song, Hong Chen, Xinhe Zheng, Mingzeng Peng
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Crystals
Subjects:
GaN/MoS<sub>2</sub>
polarization modulation
charge transfer
band alignment
3D/2D polar heterojunctions
Online Access:https://www.mdpi.com/2073-4352/13/4/563

Internet

https://www.mdpi.com/2073-4352/13/4/563

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