Projecting GaN HEMTs lifetimes under typical stresses commonly observed in DC-DC converters

Projecting GaN HEMTs lifetimes under typical stresses commonly observed in DC-DC converters

DC-DC converters exist in virtually every application of modern power electronics. Due to small die size, low on-resistance, and low parasitic capacitance, GaN power devices offer superior conversion efficiency and record-setting power density. In this paper, test-to-fail methodology is adopted to i...

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Bibliographic Details
Main Authors: Shengke Zhang, Siddhesh Gajare, Ricardo Garcia, Sijun Huang, Angel Espinoza, Andrea Gorgerino, Ruizhe Zhang, Alejandro Pozo, Robert Strittmatter, Alex Lidow
Format: Article
Language:English
Published: Elsevier 2023-10-01
Series:Power Electronic Devices and Components
Subjects:
GaN
HEMTs
DC-DC converters
Gate reliability
Drain reliability
Overvoltage robustness
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370423000196

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http://www.sciencedirect.com/science/article/pii/S2772370423000196

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