Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference

Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (...

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Bibliographic Details
Main Authors: El Hafed Boufouss, Laurent A. Francis, Valeriya Kilchytska, Pierre Gérard, Pascal Simon, Denis Flandre
Format: Article
Language:English
Published: MDPI AG 2013-12-01
Series:Sensors
Subjects:
biomedical
high temperature
CMOS subthreshold regime
total ionized dose
ultra-low power
voltage reference
Online Access:http://www.mdpi.com/1424-8220/13/12/17265

Internet

http://www.mdpi.com/1424-8220/13/12/17265

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