Properties of N-Type GaN Thin Film with Si-Ti Codoping on a Glass Substrate
In this study, n-type gallium nitride (GaN) films were fabricated by a silicon–titanium (Si-Ti) codoping sputtering technique with a zinc oxide (ZnO) buffer layer on amorphous glass substrates with different post-growth annealing temperatures for optimizing the GaN crystal quality. Si-Ti-codoped n-t...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-07-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/10/7/582 |