DC model for SiC MOSFETs using artificial neural network optimized by artificial bee colony algorithm
A DC model for silicon carbide (SiC) metal–oxide–semiconductor field effect transistors (MOSFETs) is proposed in this paper using a hybrid modeling method based on the artificial neural network and artificial bee colony (ABC) algorithm. A multi-layer perceptron neural network using the Levenberg–Mar...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-11-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0072302 |