Effect of MgO Underlying Layer on the Growth of GaOx Tunnel Barrier in Epitaxial Fe/GaOx/(MgO)/Fe Magnetic Tunnel Junction Structure

Effect of MgO Underlying Layer on the Growth of GaOx Tunnel Barrier in Epitaxial Fe/GaOx/(MgO)/Fe Magnetic Tunnel Junction Structure

We investigated the effect of a thin MgO underlying layer (~3 monoatomic layers) on the growth of GaOx tunnel barrier in Fe/GaOx/(MgO)/Fe(001) magnetic tunnel junctions. To obtain a single-crystalline barrier, an in situ annealing was conducted with the temperature being raised up to 500 °C under an...

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Bibliographic Details
Main Authors: Sai Krishna Narayananellore, Naoki Doko, Norihiro Matsuo, Hidekazu Saito, Shinji Yuasa
Format: Article
Language:English
Published: MDPI AG 2017-10-01
Series:Sensors
Subjects:
magnetic tunnel junction
epitaxial growth
gallium oxide
tunneling magneto-resistance
semiconductor
Online Access:https://www.mdpi.com/1424-8220/17/10/2424

Internet

https://www.mdpi.com/1424-8220/17/10/2424

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