Light Effect on Amorphous Tin Oxide Thin‐Film Transistors

Light Effect on Amorphous Tin Oxide Thin‐Film Transistors

Amorphous tin oxide (a‐SnOx) is a potential transparent oxide semiconductor candidate for future large‐area electronic applications. The thin‐film transistor (TFT) mobilities reach ≈100 cm2 Vs−1, a mobility higher than other multiple cation‐based oxide semiconductor TFTs. Few optical properties have...

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Bibliographic Details
Main Authors: Christophe Avis, Mohammad Masum Billah, Jin Jang
Format: Article
Language:English
Published: Wiley-VCH 2024-04-01
Series:Advanced Photonics Research
Subjects:
light effects
negative bias illumination stress
transistor
transparent semiconductors
Online Access:https://doi.org/10.1002/adpr.202300215

Internet

https://doi.org/10.1002/adpr.202300215

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