Light Effect on Amorphous Tin Oxide Thin‐Film Transistors
Amorphous tin oxide (a‐SnOx) is a potential transparent oxide semiconductor candidate for future large‐area electronic applications. The thin‐film transistor (TFT) mobilities reach ≈100 cm2 Vs−1, a mobility higher than other multiple cation‐based oxide semiconductor TFTs. Few optical properties have...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-04-01
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| Series: | Advanced Photonics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/adpr.202300215 |
| _version_ | 1797217437739909120 |
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| author | Christophe Avis Mohammad Masum Billah Jin Jang |
| author_facet | Christophe Avis Mohammad Masum Billah Jin Jang |
| author_sort | Christophe Avis |
| collection | DOAJ |
| description | Amorphous tin oxide (a‐SnOx) is a potential transparent oxide semiconductor candidate for future large‐area electronic applications. The thin‐film transistor (TFT) mobilities reach ≈100 cm2 Vs−1, a mobility higher than other multiple cation‐based oxide semiconductor TFTs. Few optical properties have been reported so far and therefore both the effect of visible light and negative bias illumination stress (NBIS) on a‐SnOx TFT performances, known to dramatically impact oxide semiconductor‐based TFTs, have been investigated. The variation of density of states (DOS) due to NBIS by device simulation is analyzed, and a fourfold increase of the donor‐like states and a decrease in the band edge DOS from 2.3 to 2.0 × 1019 cm−3 eV−1 are showed. The evaluation of the effect of neutral, singly, and doubly ionized oxygen vacancies by density functional theory using 95 atoms reveals not only states in the gap of SnO2, but also variations in the electron density, and modifications in the crystal parameters compared to a structure without an oxygen vacancy. Material and device simulation analysis reveal that the oxygen vacancies have a dramatical impact on the DOS in the gap of SnO2 and can explain the NBIS phenomenon observed in a‐SnOx TFT. |
| first_indexed | 2024-04-24T12:01:51Z |
| format | Article |
| id | doaj.art-5eec9573d56441bfb56cac1896f20312 |
| institution | Directory Open Access Journal |
| issn | 2699-9293 |
| language | English |
| last_indexed | 2024-04-24T12:01:51Z |
| publishDate | 2024-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Photonics Research |
| spelling | doaj.art-5eec9573d56441bfb56cac1896f203122024-04-08T16:44:45ZengWiley-VCHAdvanced Photonics Research2699-92932024-04-0154n/an/a10.1002/adpr.202300215Light Effect on Amorphous Tin Oxide Thin‐Film TransistorsChristophe Avis0Mohammad Masum Billah1Jin Jang2Department of Information Display and Advanced Display Research Center Kyung Hee University Seoul 130‐701 KoreaDepartment of Electrical and Electronic Engineering Faculty of Engineering and Technology Islamic University of Technology (IUT) Gazipur 1704 BangladeshDepartment of Information Display and Advanced Display Research Center Kyung Hee University Seoul 130‐701 KoreaAmorphous tin oxide (a‐SnOx) is a potential transparent oxide semiconductor candidate for future large‐area electronic applications. The thin‐film transistor (TFT) mobilities reach ≈100 cm2 Vs−1, a mobility higher than other multiple cation‐based oxide semiconductor TFTs. Few optical properties have been reported so far and therefore both the effect of visible light and negative bias illumination stress (NBIS) on a‐SnOx TFT performances, known to dramatically impact oxide semiconductor‐based TFTs, have been investigated. The variation of density of states (DOS) due to NBIS by device simulation is analyzed, and a fourfold increase of the donor‐like states and a decrease in the band edge DOS from 2.3 to 2.0 × 1019 cm−3 eV−1 are showed. The evaluation of the effect of neutral, singly, and doubly ionized oxygen vacancies by density functional theory using 95 atoms reveals not only states in the gap of SnO2, but also variations in the electron density, and modifications in the crystal parameters compared to a structure without an oxygen vacancy. Material and device simulation analysis reveal that the oxygen vacancies have a dramatical impact on the DOS in the gap of SnO2 and can explain the NBIS phenomenon observed in a‐SnOx TFT.https://doi.org/10.1002/adpr.202300215light effectsnegative bias illumination stresstransistortransparent semiconductors |
| spellingShingle | Christophe Avis Mohammad Masum Billah Jin Jang Light Effect on Amorphous Tin Oxide Thin‐Film Transistors Advanced Photonics Research light effects negative bias illumination stress transistor transparent semiconductors |
| title | Light Effect on Amorphous Tin Oxide Thin‐Film Transistors |
| title_full | Light Effect on Amorphous Tin Oxide Thin‐Film Transistors |
| title_fullStr | Light Effect on Amorphous Tin Oxide Thin‐Film Transistors |
| title_full_unstemmed | Light Effect on Amorphous Tin Oxide Thin‐Film Transistors |
| title_short | Light Effect on Amorphous Tin Oxide Thin‐Film Transistors |
| title_sort | light effect on amorphous tin oxide thin film transistors |
| topic | light effects negative bias illumination stress transistor transparent semiconductors |
| url | https://doi.org/10.1002/adpr.202300215 |
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