On temperature‐dependent small‐signal modelling of GaN HEMTs using artificial neural networks and support vector regression
Abstract Machine learning‐based efficient temperature‐dependent small‐signal modelling approaches for GaN high electron mobility transistors (HEMTs) are presented by the authors here. The first method is an artificial neural network (ANN)‐based and makes use of the well‐known multilayer perceptron (...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-07-01
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| Series: | IET Microwaves, Antennas & Propagation |
| Online Access: | https://doi.org/10.1049/mia2.12112 |