A Multi-Finger GHz Frequency Doubler Based on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

A Multi-Finger GHz Frequency Doubler Based on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

This paper presents a multi-finger doubler based on amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors (TFT) operating at GHz frequency. The doubler and the TFTs have been fabricated in-house with chromium (Cr) gate electrodes. We have used the Rensselaer Polytechnic Institute amorph...

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Bibliographic Details
Main Authors: Utpal Kalita, Christian Tueckmantel, Thomas Riedl, Ullrich R. Pfeiffer
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Radio frequency
TFT
a-IGZO
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Online Access:https://ieeexplore.ieee.org/document/10177952/

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