Improvement of Performance of Modulation Response and Bandwidth of InAs/GaAs Quantum-Dot Laser Diode
This paper proposes a design model of InAs QD laser diode structure, the dimensions of the proposed model have an active region of length 800µm, width 12µm, and a height of 375nm. The proposed model of QD is disk shaped, its height is 2nm and diameter is 14nm. The QDs surface density per layer is 7×...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Unviversity of Technology- Iraq
2015-06-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_105528_398611477b572b60a6cb8bedbfec4f5e.pdf |