Improvement of Performance of Modulation Response and Bandwidth of InAs/GaAs Quantum-Dot Laser Diode
This paper proposes a design model of InAs QD laser diode structure, the dimensions of the proposed model have an active region of length 800µm, width 12µm, and a height of 375nm. The proposed model of QD is disk shaped, its height is 2nm and diameter is 14nm. The QDs surface density per layer is 7×...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2015-06-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_105528_398611477b572b60a6cb8bedbfec4f5e.pdf |
| _version_ | 1797325784727158784 |
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| author | Thaira Z. Altayyar Hadi T. Ziboon Jassim Mohammed Sahan |
| author_facet | Thaira Z. Altayyar Hadi T. Ziboon Jassim Mohammed Sahan |
| author_sort | Thaira Z. Altayyar |
| collection | DOAJ |
| description | This paper proposes a design model of InAs QD laser diode structure, the dimensions of the proposed model have an active region of length 800µm, width 12µm, and a height of 375nm. The proposed model of QD is disk shaped, its height is 2nm and diameter is 14nm. The QDs surface density per layer is 7×1012 cm-2, number of QDs layers are 5 layers, wetting layer thickness is 1nm and barrier thickness is 90nm. The evaluation of the proposed model is based on rate equations model.The InAs/GaAs QD lasers are capable of working at a very low threshold current, which is very important for the development of optical fiber communication systems.Modulation characteristics of InAs/GaAs quantum dot (QD) lasers of 1.3µm wavelength have been carefully studied at various bias currents and K-factor, the (-3 dB) bandwidth is improved at first as increasing the injected current, in addition, at large injected current, maximum value of the bandwidth is limited by K-factor, and the K-factor is mainly determined by the photon lifetime and the effective capture time, the K-factor can be minimized by choosing an optimum photon lifetime. The results show that the QD laser diode has a lower threshold current (2mA),the threshold current density (20A/cm2 ), bias voltage 0.92V, while output optical power has the range of (0-25mW), the slope efficiency is 0.25W/A. The highest relaxation oscillation frequency at room temperature is 10.18 GHz, corresponding to a modulation bandwidth of 3 GHz due to the small damping factor. Using these parameters, the maximum modulation bandwidth (f-3dBmax) is estimated as 15.56 GHz. |
| first_indexed | 2024-03-08T06:14:28Z |
| format | Article |
| id | doaj.art-5f22974d63ea467881e1845778403fee |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:14:28Z |
| publishDate | 2015-06-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-5f22974d63ea467881e1845778403fee2024-02-04T17:28:25ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582015-06-01336A1314132710.30684/etj.33.6A.3105528Improvement of Performance of Modulation Response and Bandwidth of InAs/GaAs Quantum-Dot Laser DiodeThaira Z. AltayyarHadi T. ZiboonJassim Mohammed SahanThis paper proposes a design model of InAs QD laser diode structure, the dimensions of the proposed model have an active region of length 800µm, width 12µm, and a height of 375nm. The proposed model of QD is disk shaped, its height is 2nm and diameter is 14nm. The QDs surface density per layer is 7×1012 cm-2, number of QDs layers are 5 layers, wetting layer thickness is 1nm and barrier thickness is 90nm. The evaluation of the proposed model is based on rate equations model.The InAs/GaAs QD lasers are capable of working at a very low threshold current, which is very important for the development of optical fiber communication systems.Modulation characteristics of InAs/GaAs quantum dot (QD) lasers of 1.3µm wavelength have been carefully studied at various bias currents and K-factor, the (-3 dB) bandwidth is improved at first as increasing the injected current, in addition, at large injected current, maximum value of the bandwidth is limited by K-factor, and the K-factor is mainly determined by the photon lifetime and the effective capture time, the K-factor can be minimized by choosing an optimum photon lifetime. The results show that the QD laser diode has a lower threshold current (2mA),the threshold current density (20A/cm2 ), bias voltage 0.92V, while output optical power has the range of (0-25mW), the slope efficiency is 0.25W/A. The highest relaxation oscillation frequency at room temperature is 10.18 GHz, corresponding to a modulation bandwidth of 3 GHz due to the small damping factor. Using these parameters, the maximum modulation bandwidth (f-3dBmax) is estimated as 15.56 GHz.https://etj.uotechnology.edu.iq/article_105528_398611477b572b60a6cb8bedbfec4f5e.pdfquantum dotslaser dioderate equationsmodulation bandwidth |
| spellingShingle | Thaira Z. Altayyar Hadi T. Ziboon Jassim Mohammed Sahan Improvement of Performance of Modulation Response and Bandwidth of InAs/GaAs Quantum-Dot Laser Diode Engineering and Technology Journal quantum dots laser diode rate equations modulation bandwidth |
| title | Improvement of Performance of Modulation Response and Bandwidth of InAs/GaAs Quantum-Dot Laser Diode |
| title_full | Improvement of Performance of Modulation Response and Bandwidth of InAs/GaAs Quantum-Dot Laser Diode |
| title_fullStr | Improvement of Performance of Modulation Response and Bandwidth of InAs/GaAs Quantum-Dot Laser Diode |
| title_full_unstemmed | Improvement of Performance of Modulation Response and Bandwidth of InAs/GaAs Quantum-Dot Laser Diode |
| title_short | Improvement of Performance of Modulation Response and Bandwidth of InAs/GaAs Quantum-Dot Laser Diode |
| title_sort | improvement of performance of modulation response and bandwidth of inas gaas quantum dot laser diode |
| topic | quantum dots laser diode rate equations modulation bandwidth |
| url | https://etj.uotechnology.edu.iq/article_105528_398611477b572b60a6cb8bedbfec4f5e.pdf |
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