Impact of AlN Seed Layer on Microstructure and Piezoelectric Properties of YxAl1−xN (x = 15%) Thin Films

Impact of AlN Seed Layer on Microstructure and Piezoelectric Properties of YxAl1−xN (x = 15%) Thin Films

Abstract Alloying transition metals into aluminum nitride (AlN) has surged over the past decade to increase the piezoelectric performance of AlN for microelectromechanical systems (MEMS) applications. So far, the highest piezoelectric coefficients have been achieved by alloying scandium into AlN. Bu...

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Bibliographic Details
Main Authors: Shardul Pandit, Michael Schneider, Claudio Berger, Sabine Schwarz, Ulrich Schmid
Format: Article
Language:English
Published: Wiley-VCH 2023-02-01
Series:Advanced Electronic Materials
Subjects:
microelectromechanical systems
piezoelectric
seed layer
thin‐film
yttrium aluminum nitride
Online Access:https://doi.org/10.1002/aelm.202200789

Internet

https://doi.org/10.1002/aelm.202200789

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