Study on Temperature and Etching Effects on Silicon Oxide Formation Using Laser Ellipsometric Method
In this paper, a laser ellipsometric method is implemented to study theformation of oxide films on silicon substrate at room temperature in air. Twolasers, He-Ne and semiconductor diode, as well as a tungsten halogen lamp,were used as a light source in this method to show the importance ofcoherency...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Unviversity of Technology- Iraq
2007-06-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_181294_2a018befcb392dd80c07feb3756e6d4a.pdf |