Characterization of Irradiated Boron, Carbon-Enriched and Gallium Si-on-Si Wafer Low Gain Avalanche Detectors

Characterization of Irradiated Boron, Carbon-Enriched and Gallium Si-on-Si Wafer Low Gain Avalanche Detectors

Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra doped p-layer below the n-p junction which provides signal amplification. The moderate gain of these sensors, together with the relatively thin active region, provides excellent timing performance for Minimum Ionizing Part...

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Bibliographic Details
Main Authors: Lucía Castillo García, Evangelos Leonidas Gkougkousis, Chiara Grieco, Sebastian Grinstein
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Instruments
Subjects:
LGAD
timing detectors
silicon sensors
Online Access:https://www.mdpi.com/2410-390X/6/1/2

Internet

https://www.mdpi.com/2410-390X/6/1/2

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