Characterization of Irradiated Boron, Carbon-Enriched and Gallium Si-on-Si Wafer Low Gain Avalanche Detectors
Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra doped p-layer below the n-p junction which provides signal amplification. The moderate gain of these sensors, together with the relatively thin active region, provides excellent timing performance for Minimum Ionizing Part...
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MDPI AG
2021-12-01
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| Series: | Instruments |
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| Online Access: | https://www.mdpi.com/2410-390X/6/1/2 |
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| author | Lucía Castillo García Evangelos Leonidas Gkougkousis Chiara Grieco Sebastian Grinstein |
| author_facet | Lucía Castillo García Evangelos Leonidas Gkougkousis Chiara Grieco Sebastian Grinstein |
| author_sort | Lucía Castillo García |
| collection | DOAJ |
| description | Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra doped p-layer below the n-p junction which provides signal amplification. The moderate gain of these sensors, together with the relatively thin active region, provides excellent timing performance for Minimum Ionizing Particles (MIPs). To mitigate the effect of pile-up during the High-Luminosity Large Hadron Collider (HL-LHC) era, both ATLAS and CMS experiments will install new detectors, the High-Granularity Timing Detector (HGTD) and the End-Cap Timing Layer (ETL), that rely on the LGAD technology. A full characterization of LGAD sensors fabricated by Centro Nacional de Microelectrónica (CNM), before and after neutron irradiation up to 10<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>15</mn></msup></semantics></math></inline-formula> n<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mrow><mi>e</mi><mi>q</mi></mrow></msub></semantics></math></inline-formula>/cm<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>2</mn></msup></semantics></math></inline-formula>, is presented. Sensors produced in 100 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="normal">m</mi></semantics></math></inline-formula><inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="normal">m</mi></semantics></math></inline-formula> Si-on-Si wafers and doped with boron and gallium, and also enriched with carbon, are studied. The results include their electrical characterization (I-V, C-V), bias voltage stability and performance studies with the Transient Current Technique (TCT) and a Sr-90 radioactive source setup. |
| first_indexed | 2024-03-09T19:39:25Z |
| format | Article |
| id | doaj.art-5f5fc7086265432eae069a180aaf3d50 |
| institution | Directory Open Access Journal |
| issn | 2410-390X |
| language | English |
| last_indexed | 2024-03-09T19:39:25Z |
| publishDate | 2021-12-01 |
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| spelling | doaj.art-5f5fc7086265432eae069a180aaf3d502023-11-24T01:44:26ZengMDPI AGInstruments2410-390X2021-12-0161210.3390/instruments6010002Characterization of Irradiated Boron, Carbon-Enriched and Gallium Si-on-Si Wafer Low Gain Avalanche DetectorsLucía Castillo García0Evangelos Leonidas Gkougkousis1Chiara Grieco2Sebastian Grinstein3Institut de Física d’Altes Energies (IFAE), The Barcelona Institute of Science and Technology (BIST), Carrer Can Magrans s/n, Edifici Cn, Campus UAB, E-08193 Barcelona, SpainConseil Européen pour la Recherche Nucléaire (CERN), EP Department, Esplanade des Particules 1, CH-1211 Geneva 23, SwitzerlandInstitut de Física d’Altes Energies (IFAE), The Barcelona Institute of Science and Technology (BIST), Carrer Can Magrans s/n, Edifici Cn, Campus UAB, E-08193 Barcelona, SpainInstitut de Física d’Altes Energies (IFAE), The Barcelona Institute of Science and Technology (BIST), Carrer Can Magrans s/n, Edifici Cn, Campus UAB, E-08193 Barcelona, SpainLow Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra doped p-layer below the n-p junction which provides signal amplification. The moderate gain of these sensors, together with the relatively thin active region, provides excellent timing performance for Minimum Ionizing Particles (MIPs). To mitigate the effect of pile-up during the High-Luminosity Large Hadron Collider (HL-LHC) era, both ATLAS and CMS experiments will install new detectors, the High-Granularity Timing Detector (HGTD) and the End-Cap Timing Layer (ETL), that rely on the LGAD technology. A full characterization of LGAD sensors fabricated by Centro Nacional de Microelectrónica (CNM), before and after neutron irradiation up to 10<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>15</mn></msup></semantics></math></inline-formula> n<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mrow><mi>e</mi><mi>q</mi></mrow></msub></semantics></math></inline-formula>/cm<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>2</mn></msup></semantics></math></inline-formula>, is presented. Sensors produced in 100 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="normal">m</mi></semantics></math></inline-formula><inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="normal">m</mi></semantics></math></inline-formula> Si-on-Si wafers and doped with boron and gallium, and also enriched with carbon, are studied. The results include their electrical characterization (I-V, C-V), bias voltage stability and performance studies with the Transient Current Technique (TCT) and a Sr-90 radioactive source setup.https://www.mdpi.com/2410-390X/6/1/2LGADtiming detectorssilicon sensors |
| spellingShingle | Lucía Castillo García Evangelos Leonidas Gkougkousis Chiara Grieco Sebastian Grinstein Characterization of Irradiated Boron, Carbon-Enriched and Gallium Si-on-Si Wafer Low Gain Avalanche Detectors Instruments LGAD timing detectors silicon sensors |
| title | Characterization of Irradiated Boron, Carbon-Enriched and Gallium Si-on-Si Wafer Low Gain Avalanche Detectors |
| title_full | Characterization of Irradiated Boron, Carbon-Enriched and Gallium Si-on-Si Wafer Low Gain Avalanche Detectors |
| title_fullStr | Characterization of Irradiated Boron, Carbon-Enriched and Gallium Si-on-Si Wafer Low Gain Avalanche Detectors |
| title_full_unstemmed | Characterization of Irradiated Boron, Carbon-Enriched and Gallium Si-on-Si Wafer Low Gain Avalanche Detectors |
| title_short | Characterization of Irradiated Boron, Carbon-Enriched and Gallium Si-on-Si Wafer Low Gain Avalanche Detectors |
| title_sort | characterization of irradiated boron carbon enriched and gallium si on si wafer low gain avalanche detectors |
| topic | LGAD timing detectors silicon sensors |
| url | https://www.mdpi.com/2410-390X/6/1/2 |
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