Impact of Helium Ion Implantation Dose and Annealing on Dense Near-Surface Layers of NV Centers
The implantation of diamonds with helium ions has become a common method to create hundreds-nanometers-thick near-surface layers of NV centers for high-sensitivity sensing and imaging applications; however, optimal implantation dose and annealing temperature are still a matter of discussion. In this...
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MDPI AG
2022-06-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/13/2234 |
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| author | Andris Berzins Hugo Grube Einars Sprugis Guntars Vaivars Ilja Fescenko |
| author_facet | Andris Berzins Hugo Grube Einars Sprugis Guntars Vaivars Ilja Fescenko |
| author_sort | Andris Berzins |
| collection | DOAJ |
| description | The implantation of diamonds with helium ions has become a common method to create hundreds-nanometers-thick near-surface layers of NV centers for high-sensitivity sensing and imaging applications; however, optimal implantation dose and annealing temperature are still a matter of discussion. In this study, we irradiated HPHT diamonds with an initial nitrogen concentration of 100 ppm using different implantation doses of helium ions to create 200-nm thick NV layers. We compare a previously considered optimal implantation dose of ∼<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mn>10</mn><mn>12</mn></msup></semantics></math></inline-formula> He<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msup><mrow></mrow><mo>+</mo></msup><mo>/</mo></mrow></semantics></math></inline-formula>cm<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>2</mn></msup></semantics></math></inline-formula> to double and triple doses by measuring fluorescence intensity, contrast, and linewidth of magnetic resonances, as well as longitudinal and transversal relaxation times <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>T</mi><mn>1</mn></msub></semantics></math></inline-formula> and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>T</mi><mn>2</mn></msub></semantics></math></inline-formula>. From these direct measurements, we also estimate concentrations of P1 and NV centers. In addition, we compare the three diamond samples that underwent three consequent annealing steps to quantify the impact of processing at 1100 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>°</mo></msup></semantics></math></inline-formula>C, which follows initial annealing at 800 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>°</mo></msup></semantics></math></inline-formula>C. By tripling the implantation dose, we have increased the magnetic sensitivity of our sensors by <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>28</mn><mo>±</mo><mn>5</mn></mrow></semantics></math></inline-formula>%. By projecting our results to higher implantation doses, we demonstrate that it is possible to achieve a further improvement of up to 70%. At the same time, additional annealing steps at 1100 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>°</mo></msup></semantics></math></inline-formula>C improve the sensitivity only by 6.6 ± 2.7%. |
| first_indexed | 2024-03-09T10:26:25Z |
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| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T10:26:25Z |
| publishDate | 2022-06-01 |
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| series | Nanomaterials |
| spelling | doaj.art-5f9142d5fbe44ea39fc43053dc78ce1f2023-12-01T21:37:32ZengMDPI AGNanomaterials2079-49912022-06-011213223410.3390/nano12132234Impact of Helium Ion Implantation Dose and Annealing on Dense Near-Surface Layers of NV CentersAndris Berzins0Hugo Grube1Einars Sprugis2Guntars Vaivars3Ilja Fescenko4Laser Center, University of Latvia, LV-1004 Riga, LatviaLaser Center, University of Latvia, LV-1004 Riga, LatviaInstitute of Solid State Physics, University of Latvia, LV-1063 Riga, LatviaInstitute of Solid State Physics, University of Latvia, LV-1063 Riga, LatviaLaser Center, University of Latvia, LV-1004 Riga, LatviaThe implantation of diamonds with helium ions has become a common method to create hundreds-nanometers-thick near-surface layers of NV centers for high-sensitivity sensing and imaging applications; however, optimal implantation dose and annealing temperature are still a matter of discussion. In this study, we irradiated HPHT diamonds with an initial nitrogen concentration of 100 ppm using different implantation doses of helium ions to create 200-nm thick NV layers. We compare a previously considered optimal implantation dose of ∼<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mn>10</mn><mn>12</mn></msup></semantics></math></inline-formula> He<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msup><mrow></mrow><mo>+</mo></msup><mo>/</mo></mrow></semantics></math></inline-formula>cm<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>2</mn></msup></semantics></math></inline-formula> to double and triple doses by measuring fluorescence intensity, contrast, and linewidth of magnetic resonances, as well as longitudinal and transversal relaxation times <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>T</mi><mn>1</mn></msub></semantics></math></inline-formula> and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>T</mi><mn>2</mn></msub></semantics></math></inline-formula>. From these direct measurements, we also estimate concentrations of P1 and NV centers. In addition, we compare the three diamond samples that underwent three consequent annealing steps to quantify the impact of processing at 1100 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>°</mo></msup></semantics></math></inline-formula>C, which follows initial annealing at 800 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>°</mo></msup></semantics></math></inline-formula>C. By tripling the implantation dose, we have increased the magnetic sensitivity of our sensors by <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>28</mn><mo>±</mo><mn>5</mn></mrow></semantics></math></inline-formula>%. By projecting our results to higher implantation doses, we demonstrate that it is possible to achieve a further improvement of up to 70%. At the same time, additional annealing steps at 1100 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>°</mo></msup></semantics></math></inline-formula>C improve the sensitivity only by 6.6 ± 2.7%.https://www.mdpi.com/2079-4991/12/13/2234nitrogen-vacancy centersHe ion implantationdiamond annealingdense NV layers |
| spellingShingle | Andris Berzins Hugo Grube Einars Sprugis Guntars Vaivars Ilja Fescenko Impact of Helium Ion Implantation Dose and Annealing on Dense Near-Surface Layers of NV Centers Nanomaterials nitrogen-vacancy centers He ion implantation diamond annealing dense NV layers |
| title | Impact of Helium Ion Implantation Dose and Annealing on Dense Near-Surface Layers of NV Centers |
| title_full | Impact of Helium Ion Implantation Dose and Annealing on Dense Near-Surface Layers of NV Centers |
| title_fullStr | Impact of Helium Ion Implantation Dose and Annealing on Dense Near-Surface Layers of NV Centers |
| title_full_unstemmed | Impact of Helium Ion Implantation Dose and Annealing on Dense Near-Surface Layers of NV Centers |
| title_short | Impact of Helium Ion Implantation Dose and Annealing on Dense Near-Surface Layers of NV Centers |
| title_sort | impact of helium ion implantation dose and annealing on dense near surface layers of nv centers |
| topic | nitrogen-vacancy centers He ion implantation diamond annealing dense NV layers |
| url | https://www.mdpi.com/2079-4991/12/13/2234 |
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